If you have been in search of Microcircuit Set products that are listed with the NSN 5962013630915 we have you covered here on Speedy NSN. You have reached the RFQ page for part number 5309-1N a Harnischfeger Corp item that is readily available for procurement from our website at any time. Whether you wish to purchase this part or simply want to receive more information for your comparisons, be sure to fill out and complete the form provided on this page with as much detail as you can regarding your needs and restrictions. Within 15 minutes of us receiving and reviewing a completed form, a member of our staff will reach out to you to present a customized quote that keeps your part requirements in mind.
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To ensure that customers only procure the exact items they are looking for, we list products with as much information as possible. For example, this particular Harnischfeger Corp part was produced under the CAGE Code 56010, ], a unique identifier assigned to manufacturers who have been approved to supply government entities. Additionally, with the NSN 5962-01-363-0915 this product also belongs to the FSC 5962 Microcircuits Electronic. If you ever have any questions regarding our offerings or services, be sure to call or email us at your convenience. Get started on the purchasing process today so we can fulfill all your operational needs as your strategic sourcing partner.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-363-0915 Item PartTypeName: MICROCIRCUIT SET | 5962 | 013630915 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
5962-8769001RA | 2 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
AFGA | OPERATING TEMP RANGE | -55.0/100.0 DEG CELSIUS 1ST MEMORY-55.0/125.0 DEG CELSIUS 2ND MEMORY |
ASDD | COMPONENT FUNCTION RELATIONSHIP | UNMATCHED |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 1ST MEMORYD-8 MIL-M-38510 2ND MEMORY |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT DEVICES,EPROM/PROM |
CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC 1ST MEMORYBIPOLAR METAL-OXIDE SEMICONDUCTOR 2ND MEMORY |
CSSL | DESIGN FUNCTION AND QUANTITY | 2 PROM PROGRAM TABLE |
TTQY | TERMINAL TYPE AND QUANTITY | 24 CASE 1ST MEMORY20 CASE 2ND MEMORY |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CBBL | FEATURES PROVIDED | PROGRAMMED |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEM | MICROCIRCUIT DEVICE TYPE AND QUANTITY | 2 MEMORY |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM ABSOLUTE INPUT AND 7.0 VOLTS MAXIMUM ABSOLUTE INPUT |
CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS NOMINAL ACCESS 1ST MEMORY70.00 NANOSECONDS NOMINAL ACCESS 2ND MEMORY |
CZER | MEMORY DEVICE TYPE | EEPROM ERR-100 ERR-100ROM ERR-100 ERR-100 |
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